A nuclear battery based on silicon p-i-n structures with electroplating 63Ni layer

Device model for pulsing in silicon p-i-n structures

We report experimental data and modeling results based on device physics and circuit parameters for the spontaneous firing patterns for silicon p-i-n structures at 4.2 K controlled by a constant current source. The model provides insights into the sensitivity of the pulsing rate and explains the wide range of behavior. observed. The knowledge on the effect of these parameters on pulsing is crit...

Seedless electroplating on patterned silicon

Nickel thin films have been electrodeposited without the use of an additional seed layer, on highly doped silicon wafers. These substrates conduct sufficiently well to allow deposition using a peripherical electrical contact on the wafer. Films 2 μm thick have been deposited using a nickel sulfamate bath on both n+and p+-type silicon wafers, where a series of trenches with different widths had ...

Inhibition of surface-related electrical breakdown of long p+-i-n+ silicon structures

Inhibition of surface-related electrical breakdown of long p +-in + silicon structures" (1993).

Terahertz and infrared photodetection using p-i-n multiple-graphene-layer structures

Phase regeneration of DPSK signals in a silicon waveguide with reverse-biased p-i-n junction.

Phase regeneration of differential phase-shift keying (DPSK) signals is demonstrated using a silicon waveguide as nonlinear medium for the first time. A p-i-n junction across the waveguide enables decreasing the nonlinear losses introduced by free-carrier absorption (FCA), thus allowing phase-sensitive extinction ratios as high as 20 dB to be reached under continuous-wave (CW) pumping operation...